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| RB050L-40 Diodes Schottky barrier diode RB050L-40 Applications For high-frequency rectification For switching power supplies External dimensions (Units : mm) 1.50.2 Features 1) Compact power-mold type. (PMDS) 2) IO=3A guaranteed at this size. 3) Low IR. ( IR=16A Typ. ) CATHODE MARK 4.50.2 1.20.3 3 1 5 2 0.1 +0.02 -0.1 2.00.2 2.60.2 Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 1 , 2 ***Date of manufacture EX. 1999 Dec. =9, C Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak surge current 2 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 3.0 70 125 -40~+125 Unit V V A A C C Junction temperature Storage temperature 1 When mounted on an alumina board (82x30x1.0mm), 180 Half sine wave 2 60Hz, 1 Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR j-a Thermal resistance j-a j-l Max. 0.55 0.50 1.0 90 120 25 Unit V V mA C/W C/W C/W IF=3.0A IF=1.5A VR=40V When mounted on an alumina board. When mounted on a glass epoxy board. When mounted on an alumina board. Conditions 5.00.3 RB050L-40 Diodes Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 10 10,000 Ta=125C 1000 REVERSE CURRENT : IR (A) FORWARD CURRENT : IF (A) 1,000 1 C 100 Ta=75C Ta =75 C =1 25C 25 100 100m Ta= 10 Ta=25C Ta 1 10m 0 0.1 0.2 0.3 0.4 0.5 0.6 0 5 10 15 20 25 30 35 40 10 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward temperature characteristics Fig. 2 Reverse temperature characteristics Fig. 3 Capacitance between terminals characteristics AVERAGE RECTIFIED FORWARD CURRENT : IO (A) 5.0 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) IF IO T D=Tp / T VR=VRM / 2 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) DC D=0.8 Tp IF IO T D=Tp / T VR=VRM / 2 5.0 5.0 IF IO T D=Tp / T VR=VRM / 2 4.0 D=0.5 4.0 DC Tp 4.0 Tp DC D=0.8 3.0 sin wave D=0.3 D=0.2 3.0 3.0 D=0.5 sine D=0.8 2.0 D=0.1 D=0.05 2.0 D=0.3 D=0.5 sine D=0.2 2.0 D=0.3 D=0.2 1.0 1.0 D=0.1 D=0.05 1.0 D=0.1 D=0.05 0 0 25 50 75 100 125 0 0 25 50 75 100 125 0 0 25 50 75 100 125 LEAD TEMPERATURE : TL (C) AMBIENT TEMPERATURE : Ta (C) AMBIENT TEMPERATURE : Ta (C) Fig. 4 Derating curve Fig. 5 Derating curve (when mounted on a glass epoxy board) Fig. 6 Derating curve (when mounted on an alumina board) 2.5 FORWARD POWER DISSIPATION : PF (W) DC 1.00 REVERSE POWER DISSIPATION : PR (W) VR DC 2.0 D=0.3 sine D=0.2 D=0.5 D=0.8 0.80 Tj=TjMax. 0 D=0.05 D=0.1 1.5 D=0.1 D=0.05 0.60 Tp VR D=0.2 D=0.3 D=0.5 sine 1.0 IF 0.40 T Tj=TjMax. D=Tp / T 0.5 IO Tp 0.20 D=0.8 T D=Tp / T Tj=TjMax. 0 0 1.0 2.0 3.0 4.0 5.0 0 0 5 10 15 20 25 30 35 40 AVERAGE RECTIFIED FORWARD CURRENT : IO (A) REVERSE VOLTAGE : VR (V) Fig. 7 Power dissipation characteristics Fig. 8 Reverse power dissipation |
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